Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations
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Published Version
Date
2016-02-05
Authors
Greene-Diniz, Gabriel
Fischetti, Massimo V.
Greer, James C.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
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Abstract
Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of InxGa1−xAs with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.
Description
Keywords
Conduction bands , Density functional theory , Gallium arsenide , III-V semiconductors , Indium compounds
Citation
Greene-Diniz, G., Fischetti, M. V. and Greer, J. C. (2016) 'Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations', Journal of Applied Physics, 119(5), pp. 055707. doi:10.1063/1.4940740
Copyright
© 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 119, 055707 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4940740