Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation

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dc.contributor.author Komolibus, Katarzyna
dc.contributor.author Scofield, Adam C.
dc.contributor.author Gradkowski, Kamil
dc.contributor.author Ochalski, Tomasz J.
dc.contributor.author Kim, Hyunseok
dc.contributor.author Huffaker, Diana L.
dc.contributor.author Huyet, Guillaume
dc.date.accessioned 2017-02-24T15:54:25Z
dc.date.available 2017-02-24T15:54:25Z
dc.date.issued 2016-02-09
dc.identifier.citation Komolibus, K., Scofield, A. C., Gradkowski, K., Ochalski, T. J., Kim, H., Huffaker, D. L. and Huyet, G. (2016) 'Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation', Applied Physics Letters, 108(6), pp. 061104. doi:10.1063/1.4941435 en
dc.identifier.volume 108 en
dc.identifier.startpage 061104-1 en
dc.identifier.endpage 061104-5 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/3691
dc.identifier.doi 10.1063/1.4941435
dc.description.abstract Optical properties of GaAs/InGaAs/GaAs nanopillars (NPs) grown on GaAs (111)B were investigated. Employment of a mask-etching technique allowed for an accurate control over the geometry of NP arrays in terms of both their diameter and separation. This work describes both the steady-state and time-resolved photoluminescence of these structures as a function of the ensemble geometry, composition of the insert, and various shell compounds. The effects of the NP geometry on a parasitic radiative recombination channel, originating from an overgrown lateral sidewall layer, are discussed. Optical characterization reveals a profound influence of the core-shell lattice mismatch on the carrier lifetime and emission quenching at room temperature. When the latticematching conditions are satisfied, an efficient emission from the NP arrays at room temperature and below the band-gap of silicon is observed, clearly highlighting their potential application as emitters in optical interconnects integrated with silicon platforms. en
dc.description.sponsorship Irish Government (PRTLI Cycle 5 programme, National Development Plan 2007-2013 with the assistance of the European Regional Development Fund); Science Foundation Ireland (SFI through the US-Ireland programme under Contract No. 12/US/I2490 and the NSF under Grant No. ECCS-1314253) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2016, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 108, 061104 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4941435 en
dc.subject III-V semiconductors en
dc.subject Silicon en
dc.subject Passivation en
dc.subject Etching en
dc.subject Photoluminescence en
dc.title Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Tomasz J. Ochalski, Photonics - Centre for Advanced Photonics and Process Analysis, Tyndall National Institute, University College Cork. E: tomasz.ochalski@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Draft en
dc.contributor.funder European Regional Development Fund en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder National Science Foundation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked !!CORA!! en


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