Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation

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dc.contributor.authorKomolibus, Katarzyna
dc.contributor.authorScofield, Adam C.
dc.contributor.authorGradkowski, Kamil
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorKim, Hyunseok
dc.contributor.authorHuffaker, Diana L.
dc.contributor.authorHuyet, Guillaume
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational Science Foundationen
dc.date.accessioned2017-02-24T15:54:25Z
dc.date.available2017-02-24T15:54:25Z
dc.date.issued2016-02-09
dc.description.abstractOptical properties of GaAs/InGaAs/GaAs nanopillars (NPs) grown on GaAs (111)B were investigated. Employment of a mask-etching technique allowed for an accurate control over the geometry of NP arrays in terms of both their diameter and separation. This work describes both the steady-state and time-resolved photoluminescence of these structures as a function of the ensemble geometry, composition of the insert, and various shell compounds. The effects of the NP geometry on a parasitic radiative recombination channel, originating from an overgrown lateral sidewall layer, are discussed. Optical characterization reveals a profound influence of the core-shell lattice mismatch on the carrier lifetime and emission quenching at room temperature. When the latticematching conditions are satisfied, an efficient emission from the NP arrays at room temperature and below the band-gap of silicon is observed, clearly highlighting their potential application as emitters in optical interconnects integrated with silicon platforms.en
dc.description.sponsorshipIrish Government (PRTLI Cycle 5 programme, National Development Plan 2007-2013 with the assistance of the European Regional Development Fund); Science Foundation Ireland (SFI through the US-Ireland programme under Contract No. 12/US/I2490 and the NSF under Grant No. ECCS-1314253)en
dc.description.statusPeer revieweden
dc.description.versionDraften
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKomolibus, K., Scofield, A. C., Gradkowski, K., Ochalski, T. J., Kim, H., Huffaker, D. L. and Huyet, G. (2016) 'Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation', Applied Physics Letters, 108(6), pp. 061104. doi:10.1063/1.4941435en
dc.identifier.doi10.1063/1.4941435
dc.identifier.endpage061104-5en
dc.identifier.issn0003-6951
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage061104-1en
dc.identifier.urihttps://hdl.handle.net/10468/3691
dc.identifier.volume108en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2016, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 108, 061104 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4941435en
dc.subjectIII-V semiconductorsen
dc.subjectSiliconen
dc.subjectPassivationen
dc.subjectEtchingen
dc.subjectPhotoluminescenceen
dc.titleImproved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivationen
dc.typeArticle (peer-reviewed)en
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