Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation
Scofield, Adam C.
Ochalski, Tomasz J.
Huffaker, Diana L.
Optical properties of GaAs/InGaAs/GaAs nanopillars (NPs) grown on GaAs (111)B were investigated. Employment of a mask-etching technique allowed for an accurate control over the geometry of NP arrays in terms of both their diameter and separation. This work describes both the steady-state and time-resolved photoluminescence of these structures as a function of the ensemble geometry, composition of the insert, and various shell compounds. The effects of the NP geometry on a parasitic radiative recombination channel, originating from an overgrown lateral sidewall layer, are discussed. Optical characterization reveals a profound influence of the core-shell lattice mismatch on the carrier lifetime and emission quenching at room temperature. When the latticematching conditions are satisfied, an efficient emission from the NP arrays at room temperature and below the band-gap of silicon is observed, clearly highlighting their potential application as emitters in optical interconnects integrated with silicon platforms.
III-V semiconductors , Silicon , Passivation , Etching , Photoluminescence
Komolibus, K., Scofield, A. C., Gradkowski, K., Ochalski, T. J., Kim, H., Huffaker, D. L. and Huyet, G. (2016) 'Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation', Applied Physics Letters, 108(6), pp. 061104. doi:10.1063/1.4941435
© 2016, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 108, 061104 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4941435