Liquid-phase monolayer doping of InGaAs with Si-, S-, and Sn-containing organic molecular layers
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Published Version
Date
2017-05-01
Authors
O'Connell, John
Napolitani, Enrico
Impellizzeri, Giuliana
Glynn, Colm
McGlacken, Gerard P.
O'Dwyer, Colm
Duffy, Ray
Holmes, Justin D.
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society
Published Version
Abstract
The functionalization and subsequent monolayer doping of InGaAs substrates using a tin-containing molecule and a compound containing both silicon and sulfur was investigated. Epitaxial InGaAs layers were grown on semi-insulating InP wafers and functionalized with both sulfur and silicon using mercaptopropyltriethoxysilane and with tin using allyltributylstannane. The functionalized surfaces were characterized using X-ray photoelectron spectroscopy (XPS). The surfaces were capped and subjected to rapid thermal annealing to cause in-diffusion of dopant atoms. Dopant diffusion was monitored using secondary ion mass spectrometry. Raman scattering was utilized to nondestructively determine the presence of dopant atoms, prior to destructive analysis, by comparison to a blank undoped sample. Additionally, due to the As-dominant surface chemistry, the resistance of the functionalized surfaces to oxidation in ambient conditions over periods of 24 h and 1 week was elucidated using XPS by monitoring the As 3d core level for the presence of oxide components.
Description
Keywords
Heat treatment , Mass transfer , Spectra , Thin films
Citation
O’Connell, J., Napolitani, E., Impellizzeri, G., Glynn, C., McGlacken, G. P., O’Dwyer, C., Duffy, R. and Holmes, J. D. (2017) 'Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers', ACS Omega, 2(5), pp. 1750-1759. doi: 10.1021/acsomega.7b00204