GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

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dc.contributor.author Broderick, Christopher A.
dc.contributor.author Jin, Shirong
dc.contributor.author Marko, Igor P.
dc.contributor.author Hild, Konstanze
dc.contributor.author Ludewig, Peter
dc.contributor.author Bushell, Zoe L.
dc.contributor.author Stolz, Wolfgang
dc.contributor.author Rorison, Judy M.
dc.contributor.author O'Reilly, Eoin P.
dc.contributor.author Volz, Kerstin
dc.contributor.author Sweeney, Stephen J.
dc.date.accessioned 2017-05-04T13:53:18Z
dc.date.available 2017-05-04T13:53:18Z
dc.date.issued 2017-04-19
dc.identifier.citation Broderick, C. A., Jin, S., Marko, I. P., Hild, K., Ludewig, P., Bushell, Z. L., Stolz, W., Rorison, J. M., O’Reilly, E. P., Volz, K. and Sweeney, S. J. (2017) 'GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics', Scientific Reports, 7, pp. 46371. doi: 10.1038/srep46371 en
dc.identifier.volume 7 en
dc.identifier.startpage 46371-1 en
dc.identifier.endpage 46371-9 en
dc.identifier.issn 2045-2322
dc.identifier.uri http://hdl.handle.net/10468/3917
dc.identifier.doi 10.1038/srep46371
dc.description.abstract The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing apThe potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications. en
dc.description.sponsorship Engineering and Physical Sciences Research Council, U.K. (EPSRC; project nos EP/K029665/1, EP/H005587/1, and EP/H050787/1); Science Foundation Ireland (SFI; project no. 15/IA/3082); Technology Strategy Board, U.K. (TSB; project no. TP-341 AF045L); Deutsche Forschungsgemeinschaft, German Science Foundation (DFG; project no. GRK 1782, “Functionalization of Semiconductors”); European Commission (project no. FP7-257974, “BIANCHO”) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Nature Publishing Group en
dc.rights © The Authors 2017. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Electronic properties and materials en
dc.subject Electronic structure en
dc.subject Semiconductor lasers en
dc.title GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eoin O'Reilly, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: eoin.oreilly@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2017-05-04T13:42:25Z
dc.description.version Published Version en
dc.internal.rssid 393725563
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Technology Strategy Board en
dc.contributor.funder Deutsche Forschungsgemeinschaft en
dc.contributor.funder European Commission en
dc.contributor.funder Seventh Framework Programme en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Scientific Reports en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress eoin.oreilly@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257974/EU/BIsmide And Nitride Components for High temperature Operation/BIANCHO en


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© The Authors 2017. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ Except where otherwise noted, this item's license is described as © The Authors 2017. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
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