Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
Long, Brenda; Alessio Verni, Giuseppe; O'Connell, John; Shayesteh, Maryam; Gangnaik, Anushka S.; Georgiev, Yordan M.; Carolan, Patrick B.; O'Connell, Dan; Kuhn, K. J.; Clendenning, Scott B.; Nagle, Roger E.; Duffy, Ray; Holmes, Justin D.
Date:
2016-10-27
Copyright:
© 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
Full text restriction information:
Access to this article is restricted until 24 months after publication by the request of the publisher.
Restriction lift date:
2018-10-27
Citation:
Long, B., Alessio Verni, G., O’Connell, J., Shayesteh, M., Gangnaik, A., Georgiev, Y. M., Carolan, P., O’Connell, D., Kuhn, K. J., Clendenning, S. B., Nagle, R., Duffy, R. and Holmes, J. D. (2017) 'Doping top-down e-beam fabricated germanium nanowires using molecular monolayers', Materials Science in Semiconductor Processing, 62, pp. 196-200. doi: 10.1016/j.mssp.2016.10.038
Abstract:
This paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into the underlying substrate. Electrical and material characterization was carried out, including an assessment of the Ge surface, carrier concentrations and crystal quality. Significantly, the intrinsic resistance of Ge nanowires with widths down to 30 nm, doped using MLD, was found to decrease by several orders of magnitude.
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Except where otherwise noted, this item's license is described as © 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/