Doping top-down e-beam fabricated germanium nanowires using molecular monolayers

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dc.contributor.author Long, Brenda
dc.contributor.author Alessio Verni, Giuseppe
dc.contributor.author O'Connell, John
dc.contributor.author Shayesteh, Maryam
dc.contributor.author Gangnaik, Anushka S.
dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Carolan, Patrick B.
dc.contributor.author O'Connell, Dan
dc.contributor.author Kuhn, K. J.
dc.contributor.author Clendenning, Scott B.
dc.contributor.author Nagle, Roger E.
dc.contributor.author Duffy, Ray
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2017-05-09T13:56:16Z
dc.date.available 2017-05-09T13:56:16Z
dc.date.issued 2016-10-27
dc.identifier.citation Long, B., Alessio Verni, G., O’Connell, J., Shayesteh, M., Gangnaik, A., Georgiev, Y. M., Carolan, P., O’Connell, D., Kuhn, K. J., Clendenning, S. B., Nagle, R., Duffy, R. and Holmes, J. D. (2017) 'Doping top-down e-beam fabricated germanium nanowires using molecular monolayers', Materials Science in Semiconductor Processing, 62, pp. 196-200. doi: 10.1016/j.mssp.2016.10.038 en
dc.identifier.volume 62 en
dc.identifier.startpage 196 en
dc.identifier.endpage 200 en
dc.identifier.issn 1369-8001
dc.identifier.uri http://hdl.handle.net/10468/3934
dc.identifier.doi 10.1016/j.mssp.2016.10.038
dc.description.abstract This paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into the underlying substrate. Electrical and material characterization was carried out, including an assessment of the Ge surface, carrier concentrations and crystal quality. Significantly, the intrinsic resistance of Ge nanowires with widths down to 30 nm, doped using MLD, was found to decrease by several orders of magnitude. en
dc.description.sponsorship Science Foundation Ireland (Grant Number SFI/12/RC/2278) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier Ltd. en
dc.rights © 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject Molecular layer doping en
dc.subject Nanowires en
dc.subject Semiconductors en
dc.subject Germanium en
dc.subject Conformal en
dc.subject Non-destructive en
dc.title Doping top-down e-beam fabricated germanium nanowires using molecular monolayers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 24 months after publication by the request of the publisher. en
dc.check.date 2018-10-27
dc.date.updated 2017-04-20T16:40:31Z
dc.description.version Published Version en
dc.internal.rssid 391435403
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Materials Science In Semiconductor Processing en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.IRISemailaddress brenda.long@ucc.ie en


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© 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ Except where otherwise noted, this item's license is described as © 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
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