Access to this article is restricted until 24 months after publication at the request of the publisher.. Restriction lift date: 2018-12-04
Doping of III-nitride materials
Loading...
Files
Accepted Version
Date
2016-12-04
Authors
Pampili, Pietro
Parbrook, Peter J.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Published Version
Abstract
In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as extending power electronic devices. It is found that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p-materials and these issues are described.
Description
Keywords
Gallium nitride , Indium nitride , Aluminium nitride , Semiconductors , Doping , Conductivity
Citation
Pampili, P. and Parbrook, P. J. (2017) 'Doping of III-nitride materials', Materials Science in Semiconductor Processing, 62, pp. 180-191. doi: 10.1016/j.mssp.2016.11.006