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Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings
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Date
2017-02-01
Authors
Papatryfonos, Konstantinos
Saladukha, Dzianis
Merghem, Kamel
Joshi, Siddharth
Lelarge, Francois
Bouchoule, Sophie
Kazazis, Dimitrios
Guilet, Stephane
Le Gratiet, Luc
Ochalski, Tomasz J.
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Publisher
AIP Publishing
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Abstract
Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.
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Keywords
Bragg gratings , Distributed feedback lasers , Gallium arsenide , III-V semiconductors , Indium compounds , Laser cavity resonators , Laser modes , Optical losses , Quantum dash lasers , Ridge waveguides , Waveguide lasers
Citation
Papatryfonos, K., Saladukha, D., Merghem, K., Joshi, S., Lelarge, F., Bouchoule, S., Kazazis, D., Guilet, S., Gratiet, L. L., Ochalski, T. J., Huyet, G., Martinez, A. and Ramdane, A. (2017) ‘Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings’, Journal of Applied Physics, 121, 053101 (8pp). doi:10.1063/1.4975036
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Copyright
© 2017, the Authors. Reproduced with the permission of AIP Publishing from Journal of Applied Physics 121, 053101; doi: 10.1063/1.4975036