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Restriction lift date:2017-08-04
Citation:Dinh, D. V., Brunner, F., Weyers, M., Corbett, B. and Parbrook, P. J. (2016) 'Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells', Journal of Applied Physics, 120(5), 055705. doi:10.1063/1.4960348
The exciton localization in semipolar (112⎯⎯2112¯2) InxGa1−xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.
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