Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells

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Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells

Dinh, Duc V.; Brunner, Frank; Weyers, Markus; Corbett, Brian M.; Parbrook, Peter J.
Date: 2016-08-04
Copyright: © 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 120, 055705 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4960348
Full text restriction information: Access to this article is restricted until 12 months after publication at the request of the publisher.
Restriction lift date: 2017-08-04
Citation: Dinh, D. V., Brunner, F., Weyers, M., Corbett, B. and Parbrook, P. J. (2016) 'Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells', Journal of Applied Physics, 120(5), 055705. doi:10.1063/1.4960348
Published Version: 10.1063/1.4960348

Abstract:

The exciton localization in semipolar (112⎯⎯2112¯2) InxGa1−xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.

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