Citation:Hurley, P. K., Stesmans, A., Afanas’ev, V. V., O’Sullivan, B. J. and O’Callaghan, E. (2003) 'Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing', Journal of Applied Physics, 93(7), pp. 3971-3973. doi: 10.1063/1.1559428
In this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 degreesC is presented. From a combined analysis using electron spin resonance and quasistatic capacitance-voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the P-b signal (interfacial Si-3=Si-.) for the oxidized Si(111) orientation. Furthermore, the P-b density inferred from electron spin resonance (7.8+/-1)x10(12) cm(-2), is in good agreement with the electrically active interface state density (6.7+/-1.7)x10(12) cm(-2) determined from analysis of the quasistatic capacitance-voltage response.
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