Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing

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Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing

Hurley, Paul K.; Stesmans, A.; Afanas'ev, V. V.; O'Sullivan, B. J.; O'Callaghan, E.
Date: 2003-04
Copyright: © 2003 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Hurley, P. K., Stesmans, A., Afanas’ev, V. V., O’Sullivan, B. J. and O’Callaghan, E. (2003) 'Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing', Journal of Applied Physics, 93(7), pp. 3971-3973 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1559428
Related: http://aip.scitation.org/doi/abs/10.1063/1.1559428
Citation: Hurley, P. K., Stesmans, A., Afanas’ev, V. V., O’Sullivan, B. J. and O’Callaghan, E. (2003) 'Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing', Journal of Applied Physics, 93(7), pp. 3971-3973. doi: 10.1063/1.1559428
Published Version: 10.1063/1.1559428

Abstract:

In this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 degreesC is presented. From a combined analysis using electron spin resonance and quasistatic capacitance-voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the P-b signal (interfacial Si-3=Si-.) for the oxidized Si(111) orientation. Furthermore, the P-b density inferred from electron spin resonance (7.8+/-1)x10(12) cm(-2), is in good agreement with the electrically active interface state density (6.7+/-1.7)x10(12) cm(-2) determined from analysis of the quasistatic capacitance-voltage response.

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