Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing

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dc.contributor.authorHurley, Paul K.
dc.contributor.authorStesmans, A.
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorO'Sullivan, B. J.
dc.contributor.authorO'Callaghan, E.
dc.date.accessioned2017-07-12T09:11:18Z
dc.date.available2017-07-12T09:11:18Z
dc.date.issued2003-04
dc.description.abstractIn this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 degreesC is presented. From a combined analysis using electron spin resonance and quasistatic capacitance-voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the P-b signal (interfacial Si-3=Si-.) for the oxidized Si(111) orientation. Furthermore, the P-b density inferred from electron spin resonance (7.8+/-1)x10(12) cm(-2), is in good agreement with the electrically active interface state density (6.7+/-1.7)x10(12) cm(-2) determined from analysis of the quasistatic capacitance-voltage response.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHurley, P. K., Stesmans, A., Afanas’ev, V. V., O’Sullivan, B. J. and O’Callaghan, E. (2003) 'Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing', Journal of Applied Physics, 93(7), pp. 3971-3973. doi: 10.1063/1.1559428en
dc.identifier.doi10.1063/1.1559428
dc.identifier.endpage3973
dc.identifier.issn0021-8979
dc.identifier.issued7
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage3971
dc.identifier.urihttps://hdl.handle.net/10468/4237
dc.identifier.volume93
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1559428
dc.rights© 2003 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Hurley, P. K., Stesmans, A., Afanas’ev, V. V., O’Sullivan, B. J. and O’Callaghan, E. (2003) 'Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing', Journal of Applied Physics, 93(7), pp. 3971-3973 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1559428en
dc.subjectElectron-spin-resonanceen
dc.subjectSi(100)-Sio2 interfaceen
dc.subjectSi/Sio2 interfaceen
dc.subjectDoped Sien
dc.subjectSiliconen
dc.subjectOxideen
dc.subjectOxidationen
dc.subjectDefectsen
dc.subjectStatesen
dc.subjectTrapsen
dc.subjectSemiconductor device fabricationen
dc.subjectElectron paramagnetic resonance spectroscopyen
dc.subjectThermal analysisen
dc.subjectOxidationen
dc.titleAnalysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealingen
dc.typeArticle (peer-reviewed)en
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