Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
Cherkaoui, Karim; Murtagh, M. E.; Kelly, P. V.; Crean, Gabriel M.; Cassette, S.; Delage, S. L.; Bland, S. W.
Date:
2002-01
Copyright:
© 2002 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Cherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1500417
Citation:
Cherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806.
Abstract:
Defects in the emitter region of Ga0.51In0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635 degreesC, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87+/-0.05 eV below the conduction band, the capture cross section 3x10(-14) cm(2) and the defect density of the order of 10(14) cm(-3). This defect was also found to be localized at the emitter-base interface.
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