Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

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dc.contributor.author Ryan, Cormac
dc.contributor.author Olszewski, Oskar Zbigniew
dc.contributor.author Houlihan, Ruth
dc.contributor.author O'Mahony, Conor
dc.contributor.author Blake, Alan
dc.contributor.author Duane, Russell
dc.date.accessioned 2017-07-25T14:16:22Z
dc.date.available 2017-07-25T14:16:22Z
dc.date.issued 2015
dc.identifier.citation Ryan, C., Olszewski, Z., Houlihan, R., O'Mahony, C., Blake, A. and Duane, R. (2015) 'Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches', Applied Physics Letters, 106(17), pp. 172904. doi: 10.1063/1.4919718 en
dc.identifier.volume 106
dc.identifier.issued 17
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4251
dc.identifier.doi 10.1063/1.4919718
dc.description.abstract Dielectric charging at low electric fields is characterized on radio-frequency microelectromechanical systems (RF MEMS) capacitive switches. The dielectric under investigation is silicon dioxide deposited by plasma enhanced chemical vapor deposition. The switch membrane is fabricated using a metal alloy which is shown to be mechanically robust. In the absence of mechanical degradation, these capacitive switches are appropriate test structures for the study of dielectric charging in MEMS devices. Monitoring the shift and recovery of device capacitance-voltage characteristics revealed the presence of a charging mechanism which takes place across the bottom metal-dielectric interface. Current measurements on metal-insulator-metal devices confirmed the presence of interfacial charging and discharging transient currents. The field-and temperature-dependence of these currents is the same as the well-known transient stress-induced leakage current (SILC) observed in flash memory devices. A simple model was created based on established transient SILC theory which accurately fits the measured data and reveals that charge exchange at the bottom metal-dielectric interface is responsible for charging currents and pull-in voltage changes in these MEMS devices. (C) 2015 AIP Publishing LLC. en
dc.description.sponsorship Science Foundation Ireland (SFI 10/RFP/ECE2883); Irish Research Council for Science, Engineering and Technology and European Space Agency (ESA-IRCSET support under the NPI programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4919718
dc.rights © 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ryan, C., Olszewski, Z., Houlihan, R., O'Mahony, C., Blake, A. and Duane, R. (2015) 'Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches', Applied Physics Letters, 106(17), pp. 172904 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4919718 en
dc.subject Oxide traps en
dc.subject Mems en
dc.subject Dependence en
dc.subject Microelectromechanical systems en
dc.subject Charged currents en
dc.subject Dielectric devices en
dc.subject Dielectric thin films en
dc.subject Charge exchange reactions en
dc.title Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Cormac Ryan, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 234 6980, Email: cormac.ryan@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000353839100042
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.contributor.funder European Space Agency
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress cormac.ryan@tyndall.ie en
dc.identifier.articleid 172904


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