Ultrafast dynamics of type-II GaSb/GaAs quantum dots

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dc.contributor.author Komolibus, Katarzyna
dc.contributor.author Piwonski, Tomasz
dc.contributor.author Gradkowski, Kamil
dc.contributor.author Reyner, C. J.
dc.contributor.author Liang, Baolai
dc.contributor.author Huyet, Guillaume
dc.contributor.author Huffaker, Diana L.
dc.contributor.author Houlihan, John
dc.date.accessioned 2017-07-25T14:16:23Z
dc.date.available 2017-07-25T14:16:23Z
dc.date.issued 2015
dc.identifier.citation Komolibus, K., Piwonski, T., Gradkowski, K., Reyner, C. J., Liang, B., Huyet, G., Huffaker, D. L. and Houlihan, J. (2015) 'Ultrafast dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 106(3), pp. 031106. doi: 10.1063/1.4906106 en
dc.identifier.volume 106
dc.identifier.issued 3
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4253
dc.identifier.doi 10.1063/1.4906106
dc.description.abstract In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures. (C) 2015 AIP Publishing LLC. en
dc.description.sponsorship Higher Education Authority (Irish Government’s Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007-2013 with the assistance of the European Regional Development Fund); University of California (Lab Fees Research Program (12-LR-238568)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4906106
dc.rights © 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Komolibus, K., Piwonski, T., Gradkowski, K., Reyner, C. J., Liang, B., Huyet, G., Huffaker, D. L. and Houlihan, J. (2015) 'Ultrafast dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 106(3), pp. 031106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4906106 en
dc.subject Quantum dots en
dc.subject III-V semiconductors en
dc.subject Blue shift en
dc.subject Spontaneous emission en
dc.subject Electrons en
dc.title Ultrafast dynamics of type-II GaSb/GaAs quantum dots en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Tomasz Piwonski, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: E-mail: tomasz.piwonski@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000348381000006
dc.contributor.funder European Regional Development Fund
dc.contributor.funder University of California, Los Angeles
dc.contributor.funder Higher Education Authority
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress tomasz.piwonski@tyndall.ie en
dc.identifier.articleid 31106

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