Ultrafast dynamics of type-II GaSb/GaAs quantum dots

Simple item page
dc.contributor.authorKomolibus, Katarzyna
dc.contributor.authorPiwonski, Tomasz
dc.contributor.authorGradkowski, Kamil
dc.contributor.authorReyner, C. J.
dc.contributor.authorLiang, Baolai
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorHuffaker, Diana L.
dc.contributor.authorHoulihan, John
dc.contributor.funderEuropean Regional Development Fund
dc.contributor.funderUniversity of California, Los Angeles
dc.contributor.funderHigher Education Authority
dc.date.accessioned2017-07-25T14:16:23Z
dc.date.available2017-07-25T14:16:23Z
dc.date.issued2015
dc.description.abstractIn this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures. (C) 2015 AIP Publishing LLC.en
dc.description.sponsorshipHigher Education Authority (Irish Government’s Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007-2013 with the assistance of the European Regional Development Fund); University of California (Lab Fees Research Program (12-LR-238568))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid31106
dc.identifier.citationKomolibus, K., Piwonski, T., Gradkowski, K., Reyner, C. J., Liang, B., Huyet, G., Huffaker, D. L. and Houlihan, J. (2015) 'Ultrafast dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 106(3), pp. 031106. doi: 10.1063/1.4906106en
dc.identifier.doi10.1063/1.4906106
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued3
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4253
dc.identifier.volume106
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4906106
dc.rights© 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Komolibus, K., Piwonski, T., Gradkowski, K., Reyner, C. J., Liang, B., Huyet, G., Huffaker, D. L. and Houlihan, J. (2015) 'Ultrafast dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 106(3), pp. 031106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4906106en
dc.subjectQuantum dotsen
dc.subjectIII-V semiconductorsen
dc.subjectBlue shiften
dc.subjectSpontaneous emissionen
dc.subjectElectronsen
dc.titleUltrafast dynamics of type-II GaSb/GaAs quantum dotsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3238.pdf
Size:
689.19 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles