Ultrafast dynamics of type-II GaSb/GaAs quantum dots
Reyner, C. J.
Huffaker, Diana L.
In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures. (C) 2015 AIP Publishing LLC.
Quantum dots , III-V semiconductors , Blue shift , Spontaneous emission , Electrons
Komolibus, K., Piwonski, T., Gradkowski, K., Reyner, C. J., Liang, B., Huyet, G., Huffaker, D. L. and Houlihan, J. (2015) 'Ultrafast dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 106(3), pp. 031106. doi: 10.1063/1.4906106
© 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Komolibus, K., Piwonski, T., Gradkowski, K., Reyner, C. J., Liang, B., Huyet, G., Huffaker, D. L. and Houlihan, J. (2015) 'Ultrafast dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 106(3), pp. 031106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4906106