Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)(2)S surface treatments

Loading...
Thumbnail Image
Files
3240.pdf(623.51 KB)
Published Version
Date
2014
Authors
Peralagu, Uthayasankaran
Povey, Ian M.
Carolan, Patrick B.
Lin, Jun
Contreras-Guerrero, Rocio
Droopad, Ravi
Hurley, Paul K.
Thayne, Iain G.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Research Projects
Organizational Units
Journal Issue
Abstract
In this work, the impact of ammonium sulfide ((NH4)(2)S) surface treatment on the electrical passivation of the Al2O3/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al2O3, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH4)(2)S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D-it) distribution showed a minimum value of 4 x 10(12) cm(-2)eV(-1) at E-v + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al2O3/p-GaSb interface of samples treated with 10% and 22% (NH4)(2)S. In combination, these effects degrade the interface quality as reflected in the CV characteristics. (C) 2014 AIP Publishing LLC.
Description
Keywords
Capacitance , III-V semiconductors , Ozone , Surface treatments , Gas liquid interfaces
Citation
Peralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) 'Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments', Applied Physics Letters, 105(16), pp. 162907. doi: 10.1063/1.4899123
Copyright
© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Peralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) 'Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments', Applied Physics Letters, 105(16), pp. 162907 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4899123