Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)(2)S surface treatments

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dc.contributor.author Peralagu, Uthayasankaran
dc.contributor.author Povey, Ian M.
dc.contributor.author Carolan, Patrick B.
dc.contributor.author Lin, Jun
dc.contributor.author Contreras-Guerrero, Rocio
dc.contributor.author Droopad, Ravi
dc.contributor.author Hurley, Paul K.
dc.contributor.author Thayne, Iain G.
dc.date.accessioned 2017-07-25T14:16:23Z
dc.date.available 2017-07-25T14:16:23Z
dc.date.issued 2014
dc.identifier.citation Peralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) 'Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments', Applied Physics Letters, 105(16), pp. 162907. doi: 10.1063/1.4899123 en
dc.identifier.volume 105
dc.identifier.issued 16
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4255
dc.identifier.doi 10.1063/1.4899123
dc.description.abstract In this work, the impact of ammonium sulfide ((NH4)(2)S) surface treatment on the electrical passivation of the Al2O3/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al2O3, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH4)(2)S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D-it) distribution showed a minimum value of 4 x 10(12) cm(-2)eV(-1) at E-v + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al2O3/p-GaSb interface of samples treated with 10% and 22% (NH4)(2)S. In combination, these effects degrade the interface quality as reflected in the CV characteristics. (C) 2014 AIP Publishing LLC. en
dc.description.sponsorship Semiconductor Research Corporation (Task ID 1637.002) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4899123
dc.rights © 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Peralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) 'Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments', Applied Physics Letters, 105(16), pp. 162907 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4899123 en
dc.subject Capacitance en
dc.subject III-V semiconductors en
dc.subject Ozone en
dc.subject Surface treatments en
dc.subject Gas liquid interfaces en
dc.title Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)(2)S surface treatments en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ian Povey, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-234-6076, Email: ian.povey@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000344363000060
dc.contributor.funder Semiconductor Research Corporation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress ian.povey@tyndall.ie en
dc.identifier.articleid 162907


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