Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Cabrera, W.; Brennan, B.; Dong, H.; O'Regan, Terrance P.; Povey, Ian M.; Monaghan, Scott; O'Connor, Éamon; Hurley, Paul K.; Wallace, R. M.; Chabal, Y. J.
Date:
2014
Copyright:
© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Cabrera, W., Brennan, B., Dong, H., O'Regan, T. P., Povey, I. M., Monaghan, S., O'Connor, É., Hurley, P. K., Wallace, R. M. and Chabal, Y. J. (2014) 'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing', Applied Physics Letters, 104(1), pp. 011601 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4860960
Citation:
Cabrera, W., Brennan, B., Dong, H., O'Regan, T. P., Povey, I. M., Monaghan, S., O'Connor, É., Hurley, P. K., Wallace, R. M. and Chabal, Y. J. (2014) 'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing', Applied Physics Letters, 104(1), pp. 011601. doi: 10.1063/1.4860960
Abstract:
Diffusion of indium through HfO2 after post deposition annealing in N-2 or forming gas environments is observed in HfO2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 degrees C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance. (C) 2014 AIP Publishing LLC.
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