Fabrication of p-type porous GaN on silicon and epitaxial GaN
Bilousov, O. V.; Geaney, Hugh; Carvajal, J. J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, F.; Aguilo, M.; O'Dwyer, Colm
Date:
2013
Copyright:
© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Bilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN', Applied Physics Letters, 103(11), pp. 112103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4821191
Citation:
Bilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN', Applied Physics Letters, 103(11), pp. 112103. doi: 10.1063/1.4821191
Abstract:
Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of similar to 10(18) cm(-3). Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN. (C) 2013 AIP Publishing LLC.
Show full item record
