Refractive index dynamics of InAs/GaAs quantum dots

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Date
2013
Authors
Crowley, Mark T.
Houlihan, John
Piwonski, Tomasz
O'Driscoll, Ian
Williams, David P.
O'Reilly, Eoin P.
Uskov, Alexander V.
Huyet, Guillaume
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AIP Publishing
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Abstract
The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phase. (C) 2013 AIP Publishing LLC. (DOI: 10.1063/1.4813472)
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Keywords
Semiconductor optical amplifiers , Lasers , Gaas , Gain , Ground states , Quantum dots , III-V semiconductors , Refractive index , Carrier density
Citation
Crowley, M. T., Houlihan, J., Piwonski, T., O'Driscoll, I., Williams, D. P., O'Reilly, E. P., Uskov, A. V. and Huyet, G. (2013) 'Refractive index dynamics of InAs/GaAs quantum dots', Applied Physics Letters, 103(2), pp. 021114. doi: 10.1063/1.4813472
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© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Crowley, M. T., Houlihan, J., Piwonski, T., O'Driscoll, I., Williams, D. P., O'Reilly, E. P., Uskov, A. V. and Huyet, G. (2013) 'Refractive index dynamics of InAs/GaAs quantum dots', Applied Physics Letters, 103(2), pp. 021114 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4813472