Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes
Loading...
Files
Published Version
Date
2013
Authors
Green, Richard P.
McKendry, Jonathan J. D.
Massoubre, David
Gu, Erdan
Dawson, Martin D.
Kelly, A. E.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1 +/- 0.3) x 10(-29) cm(6) s(-1) at 450 nm and (3 +/- 1) x 10(-30) cm(6) s(-1) at 520 nm. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4794078)
Description
Keywords
Surface , Lasers , Output , Nm , Carrier density , Quantum wells , Light emitting diodes , III-V semiconductors , Carrier lifetimes
Citation
Green, R. P., McKendry, J. J. D., Massoubre, D., Gu, E., Dawson, M. D. and Kelly, A. E. (2013) 'Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes', Applied Physics Letters, 102(9), pp. 091103. doi: 10.1063/1.4794078
Link to publisher’s version
Collections
Copyright
© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in TGreen, R. P., McKendry, J. J. D., Massoubre, D., Gu, E., Dawson, M. D. and Kelly, A. E. (2013) 'Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes', Applied Physics Letters, 102(9), pp. 091103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4794078