Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

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dc.contributor.author Green, Richard P.
dc.contributor.author McKendry, Jonathan J. D.
dc.contributor.author Massoubre, David
dc.contributor.author Gu, Erdan
dc.contributor.author Dawson, Martin D.
dc.contributor.author Kelly, A. E.
dc.date.accessioned 2017-07-28T09:23:23Z
dc.date.available 2017-07-28T09:23:23Z
dc.date.issued 2013
dc.identifier.citation Green, R. P., McKendry, J. J. D., Massoubre, D., Gu, E., Dawson, M. D. and Kelly, A. E. (2013) 'Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes', Applied Physics Letters, 102(9), pp. 091103. doi: 10.1063/1.4794078 en
dc.identifier.volume 102
dc.identifier.issued 9
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4286
dc.identifier.doi 10.1063/1.4794078
dc.description.abstract We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1 +/- 0.3) x 10(-29) cm(6) s(-1) at 450 nm and (3 +/- 1) x 10(-30) cm(6) s(-1) at 520 nm. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4794078) en
dc.description.sponsorship Engineering and Physical Sciences Research Council (EPSRC "HYPIX" program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4794078
dc.rights © 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in TGreen, R. P., McKendry, J. J. D., Massoubre, D., Gu, E., Dawson, M. D. and Kelly, A. E. (2013) 'Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes', Applied Physics Letters, 102(9), pp. 091103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4794078 en
dc.subject Surface en
dc.subject Lasers en
dc.subject Output en
dc.subject Nm en
dc.subject Carrier density en
dc.subject Quantum wells en
dc.subject Light emitting diodes en
dc.subject III-V semiconductors en
dc.subject Carrier lifetimes en
dc.title Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Richard Green, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: r.green @ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000316085200003
dc.contributor.funder Engineering and Physical Sciences Research Council
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress r.green@ucc.ie en
dc.identifier.articleid 91103


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