Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices
Thoma, Jiri; Liang, Baolai; Lewis, Liam; Hegarty, Stephen P.; Huyet, Guillaume; Huffaker, Diana L.
Date:
2013
Copyright:
© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices', Applied Physics Letters, 102(5), pp. 053110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4791565
Citation:
Thoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices', Applied Physics Letters, 102(5), pp. 053110. doi: 10.1063/1.4791565
Abstract:
We characterize the electro-optical and lasing properties of a hybrid material consisting of multiple InAs quantum dot (QD) layers together with an InGaAs quantum well (QW) grown on a GaAs substrate. Over 40 nm Stark shift of the InGaAs QW leading to 9 dB extinction ratio was demonstrated. Lasing operation at the QD first excited state transition of 1070 nm was achieved and together with < 10 ps absorption recovery the system shows promise for high-speed mode-locked lasers and electro-modulated lasers. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4791565)
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