InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer
Mathews, Ian P.; O'Mahony, Donagh; Gocalińska, Agnieszka M.; Manganaro, Marina; Pelucchi, Emanuele; Schmidt, Michael; Morrison, Alan P.; Corbett, Brian M.
Date:
2013
Copyright:
© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Mathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4789521
Citation:
Mathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906. doi: 10.1063/1.4789521
Abstract:
Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2). (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4789521)
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