InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer

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Date
2013
Authors
Mathews, Ian P.
O'Mahony, Donagh
Gocalińska, Agnieszka M.
Manganaro, Marina
Pelucchi, Emanuele
Schmidt, Michael
Morrison, Alan P.
Corbett, Brian M.
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AIP Publishing
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Abstract
Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2). (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4789521)
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Solar cells , III-V semiconductors , Lattice constants , Gold , Diffusion
Citation
Mathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906. doi: 10.1063/1.4789521
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© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Mathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4789521