InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer

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dc.contributor.author Mathews, Ian P.
dc.contributor.author O'Mahony, Donagh
dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Manganaro, Marina
dc.contributor.author Pelucchi, Emanuele
dc.contributor.author Schmidt, Michael
dc.contributor.author Morrison, Alan P.
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2017-07-28T09:23:24Z
dc.date.available 2017-07-28T09:23:24Z
dc.date.issued 2013
dc.identifier.citation Mathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906. doi: 10.1063/1.4789521 en
dc.identifier.volume 102
dc.identifier.issued 3
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4290
dc.identifier.doi 10.1063/1.4789521
dc.description.abstract Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2). (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4789521) en
dc.description.sponsorship Enterprise Ireland, European Regional Development fund (through Grant No. TD/08/338 for the project MODCON-PV); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme); Science Foundation Ireland (Grant Nos. 09/SIRG/I1621, 10/IN.1/I3000, and 07/SRC/I117) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4789521
dc.rights © 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Mathews, I., O'Mahony, D., Gocalinska, A., Manganaro, M., Pelucchi, E., Schmidt, M., Morrison, A. P. and Corbett, B. (2013) 'InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer', Applied Physics Letters, 102(3), pp. 033906 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4789521 en
dc.subject Solar cells en
dc.subject III-V semiconductors en
dc.subject Lattice constants en
dc.subject Gold en
dc.subject Diffusion en
dc.title InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Agnieszka Gocalińska, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: agnieszka.gocalinska@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 206307952
dc.internal.wokid WOS:000314032600093
dc.contributor.funder Enterprise Ireland
dc.contributor.funder European Regional Development Fund
dc.contributor.funder Higher Education Authority
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress agnieszka.gocalinska@tyndall.ie en
dc.internal.IRISemailaddress a.morrison@ucc.ie en
dc.identifier.articleid 33906


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