Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots
Pavarelli, Nicola; Ochalski, Tomasz J.; Liu, H. Y.; Gradkowski, Kamil; Schmidt, Michael; Williams, David P.; Mowbray, D. J.; Huyet, Guillaume
Date:
2012
Copyright:
© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4769431
Citation:
Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109. doi: 10.1063/1.4769431
Abstract:
The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4769431)
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