Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots
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Date
2012
Authors
Pavarelli, Nicola
Ochalski, Tomasz J.
Liu, H. Y.
Gradkowski, Kamil
Schmidt, Michael
Williams, David P.
Mowbray, D. J.
Huyet, Guillaume
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4769431)
Description
Keywords
Light-emission , Layer , Quantum dots , Quantum wells , III-V semiconductors , Photoluminescence , Electrons
Citation
Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109. doi: 10.1063/1.4769431
Copyright
© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4769431