Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

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dc.contributor.author	Pavarelli, Nicola
dc.contributor.author	Ochalski, Tomasz J.
dc.contributor.author	Liu, H. Y.
dc.contributor.author	Gradkowski, Kamil
dc.contributor.author	Schmidt, Michael
dc.contributor.author	Williams, David P.
dc.contributor.author	Mowbray, D. J.
dc.contributor.author	Huyet, Guillaume
dc.date.accessioned	2017-07-28T09:23:24Z
dc.date.available	2017-07-28T09:23:24Z
dc.date.issued	2012
dc.identifier.citation	Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109. doi: 10.1063/1.4769431	en
dc.identifier.volume	101
dc.identifier.issued	23
dc.identifier.startpage	1
dc.identifier.endpage	4
dc.identifier.issn	0003-6951
dc.identifier.issn	1077-3118
dc.identifier.uri	http://hdl.handle.net/10468/4293
dc.identifier.doi	10.1063/1.4769431
dc.description.abstract	The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4769431)	en
dc.description.sponsorship	Science Foundation Ireland (07/IN.1/I929, 09/SIRG/I1621); Enterprise Ireland (RE/2007/006); Higher Education Authority (INSPIRE programme under the HEA PRTLI Cycle 4, National Development Plan)	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	AIP Publishing	en
dc.relation.uri	http://aip.scitation.org/doi/abs/10.1063/1.4769431
dc.rights	© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4769431	en
dc.subject	Light-emission	en
dc.subject	Layer	en
dc.subject	Quantum dots	en
dc.subject	Quantum wells	en
dc.subject	III-V semiconductors	en
dc.subject	Photoluminescence	en
dc.subject	Electrons	en
dc.title	Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots	en
dc.type	Article (peer-reviewed)	en
dc.internal.authorcontactother	Tomasz Ochalski, Tyndall National Institute, University College Cork, Cork, Ireland +353 (0)21 2346227, Email: tomasz.ochalski@tyndall.ie	en
dc.internal.availability	Full text available	en
dc.description.version	Published Version	en
dc.internal.wokid	WOS:000312243900009
dc.contributor.funder	Science Foundation Ireland
dc.contributor.funder	Enterprise Ireland
dc.contributor.funder	Higher Education Authority
dc.description.status	Peer reviewed	en
dc.identifier.journaltitle	Applied Physics Letters	en
dc.internal.IRISemailaddress	tomasz.ochalski@tyndall.ie	en
dc.identifier.articleid	231109