Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

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dc.contributor.author Pavarelli, Nicola
dc.contributor.author Ochalski, Tomasz J.
dc.contributor.author Liu, H. Y.
dc.contributor.author Gradkowski, Kamil
dc.contributor.author Schmidt, Michael
dc.contributor.author Williams, David P.
dc.contributor.author Mowbray, D. J.
dc.contributor.author Huyet, Guillaume
dc.date.accessioned 2017-07-28T09:23:24Z
dc.date.available 2017-07-28T09:23:24Z
dc.date.issued 2012
dc.identifier.citation Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109. doi: 10.1063/1.4769431 en
dc.identifier.volume 101
dc.identifier.issued 23
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4293
dc.identifier.doi 10.1063/1.4769431
dc.description.abstract The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4769431) en
dc.description.sponsorship Science Foundation Ireland (07/IN.1/I929, 09/SIRG/I1621); Enterprise Ireland (RE/2007/006); Higher Education Authority (INSPIRE programme under the HEA PRTLI Cycle 4, National Development Plan) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4769431
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4769431 en
dc.subject Light-emission en
dc.subject Layer en
dc.subject Quantum dots en
dc.subject Quantum wells en
dc.subject III-V semiconductors en
dc.subject Photoluminescence en
dc.subject Electrons en
dc.title Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Tomasz Ochalski, Tyndall National Institute, University College Cork, Cork, Ireland +353 (0)21 2346227, Email: tomasz.ochalski@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000312243900009
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Enterprise Ireland
dc.contributor.funder Higher Education Authority
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress tomasz.ochalski@tyndall.ie en
dc.identifier.articleid 231109


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