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| dc.contributor.author | Pavarelli, Nicola | |
| dc.contributor.author | Ochalski, Tomasz J. | |
| dc.contributor.author | Liu, H. Y. | |
| dc.contributor.author | Gradkowski, Kamil | |
| dc.contributor.author | Schmidt, Michael | |
| dc.contributor.author | Williams, David P. | |
| dc.contributor.author | Mowbray, D. J. | |
| dc.contributor.author | Huyet, Guillaume | |
| dc.date.accessioned | 2017-07-28T09:23:24Z | |
| dc.date.available | 2017-07-28T09:23:24Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109. doi: 10.1063/1.4769431 | en |
| dc.identifier.volume | 101 | |
| dc.identifier.issued | 23 | |
| dc.identifier.startpage | 1 | |
| dc.identifier.endpage | 4 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/10468/4293 | |
| dc.identifier.doi | 10.1063/1.4769431 | |
| dc.description.abstract | The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4769431) | en |
| dc.description.sponsorship | Science Foundation Ireland (07/IN.1/I929, 09/SIRG/I1621); Enterprise Ireland (RE/2007/006); Higher Education Authority (INSPIRE programme under the HEA PRTLI Cycle 4, National Development Plan) | en |
| dc.format.mimetype | application/pdf | en |
| dc.language.iso | en | en |
| dc.publisher | AIP Publishing | en |
| dc.relation.uri | http://aip.scitation.org/doi/abs/10.1063/1.4769431 | |
| dc.rights | © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4769431 | en |
| dc.subject | Light-emission | en |
| dc.subject | Layer | en |
| dc.subject | Quantum dots | en |
| dc.subject | Quantum wells | en |
| dc.subject | III-V semiconductors | en |
| dc.subject | Photoluminescence | en |
| dc.subject | Electrons | en |
| dc.title | Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots | en |
| dc.type | Article (peer-reviewed) | en |
| dc.internal.authorcontactother | Tomasz Ochalski, Tyndall National Institute, University College Cork, Cork, Ireland +353 (0)21 2346227, Email: tomasz.ochalski@tyndall.ie | en |
| dc.internal.availability | Full text available | en |
| dc.description.version | Published Version | en |
| dc.internal.wokid | WOS:000312243900009 | |
| dc.contributor.funder | Science Foundation Ireland
|
|
| dc.contributor.funder | Enterprise Ireland
|
|
| dc.contributor.funder | Higher Education Authority
|
|
| dc.description.status | Peer reviewed | en |
| dc.identifier.journaltitle | Applied Physics Letters | en |
| dc.internal.IRISemailaddress | tomasz.ochalski@tyndall.ie | en |
| dc.identifier.articleid | 231109 |
