Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

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Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

Schulz, Stefan; Caro, Miguel A.; O'Reilly, Eoin P.
Date: 2012
Copyright: © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S., Caro, M. A. and O'Reilly, E. P. (2012) 'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots', Applied Physics Letters, 101(11), pp. 113107 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4752108
Related: http://aip.scitation.org/doi/abs/10.1063/1.4752108
Citation: Schulz, S., Caro, M. A. and O'Reilly, E. P. (2012) 'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots', Applied Physics Letters, 101(11), pp. 113107. doi: 10.1063/1.4752108
Published Version: 10.1063/1.4752108

Abstract:

We present a detailed analysis of the electrostatic built-in field, the electronic structure, and the optical properties of a-plane GaN/AlN quantum dots with an arrowhead-shaped geometry. This geometry is based on extensive experimental analysis given in the literature. Our results indicate that the spatial overlap of electron and hole ground state wave functions is significantly increased, compared to that of a c-plane system, when taking the experimentally suggested trapezoid-shaped dot base into account. This finding is in agreement with experimental data on the optical properties of a-plane GaN/AlN quantum dots. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4752108)

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