The zero temperature coefficient in junctionless nanowire transistors

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Date
2012
Authors
Trevisoli, Renan D.
Doria, Rodrigo T.
de Souza, Michelly
Das, Samaresh
Ferain, Isabelle
Pavanello, Marcelo Antonio
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AIP Publishing
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Abstract
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the series resistance of the devices and its dependence on the temperature. Experimental results of drain current, threshold voltage, and series resistance are presented for both long and short channel n and p-type devices. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4744965)
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Keywords
Doping , Ionization , Carrier mobility , Transistors , High temperature instruments
Citation
Trevisoli, R. D., Doria, R. T., Souza, M. d., Das, S., Ferain, I. and Pavanello, M. A. (2012) 'The zero temperature coefficient in junctionless nanowire transistors', Applied Physics Letters, 101(6), pp. 062101. doi: 10.1063/1.4744965
Copyright
© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Trevisoli, R. D., Doria, R. T., Souza, M. d., Das, S., Ferain, I. and Pavanello, M. A. (2012) 'The zero temperature coefficient in junctionless nanowire transistors', Applied Physics Letters, 101(6), pp. 062101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4748909