Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

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Date
2012
Authors
Chou, Hsing-Yi
O'Connor, Éamon
Hurley, Paul K.
Afanas'ev, V. V.
Houssa, M.
Stesmans, A.
Ye, P. D.
Newcomb, Simon B.
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AIP Publishing
Published Version
10.1063/1.3698461
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Abstract
Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3698461)
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Keywords
Work function , Surfaces , III-V semiconductors , Ozone , Surface treatments , Oxide surfaces , Surface photoemission
Citation
Chou, H. Y., O’Connor, E., Hurley, P. K., Afanas’ev, V. V., Houssa, M., Stesmans, A., Ye, P. D. and Newcomb, S. B. (2012) 'Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3', Applied Physics Letters, 100(14), pp. 141602. doi: 10.1063/1.3698461
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http://aip.scitation.org/doi/abs/10.1063/1.3698461
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https://hdl.handle.net/10468/4301
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Tyndall National Institute - Journal Articles
Copyright
© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chou, H. Y., O’Connor, E., Hurley, P. K., Afanas’ev, V. V., Houssa, M., Stesmans, A., Ye, P. D. and Newcomb, S. B. (2012) 'Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3', Applied Physics Letters, 100(14), pp. 141602 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3698461