Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors
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Date
2012
Authors
Park, Jong Tae
Kim, Jin Young
Colinge, Jean-Pierre
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
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Abstract
Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less significant in junctionless pMuGFETs than AM pMuGFETs. The threshold voltage shift is less significant in junctionless transistors than AM transistors. The device simulation shows that the peak of lateral electric field and the impact ionization rate of AM device are larger than those of junctionless devices. (C) 2012 American Institute of Physics. (doi:10.1063/1.3688245)
Description
Keywords
MOSFETs , Hot carriers , Transistors , Silicon , Electric fields
Citation
Park, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504. doi: 10.1063/1.3688245
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Copyright
© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Park, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3688245