Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

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Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

Park, Jong Tae; Kim, Jin Young; Colinge, Jean-Pierre
Date: 2012
Copyright: © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Park, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3688245
Related: http://aip.scitation.org/doi/abs/10.1063/1.3688245
Citation: Park, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504. doi: 10.1063/1.3688245
Published Version: 10.1063/1.3688245

Abstract:

Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less significant in junctionless pMuGFETs than AM pMuGFETs. The threshold voltage shift is less significant in junctionless transistors than AM transistors. The device simulation shows that the peak of lateral electric field and the impact ionization rate of AM device are larger than those of junctionless devices. (C) 2012 American Institute of Physics. (doi:10.1063/1.3688245)

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