Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

Show simple item record

dc.contributor.author Park, Jong Tae
dc.contributor.author Kim, Jin Young
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-07-28T10:48:29Z
dc.date.available 2017-07-28T10:48:29Z
dc.date.issued 2012
dc.identifier.citation Park, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504. doi: 10.1063/1.3688245 en
dc.identifier.volume 100
dc.identifier.issued 8
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4304
dc.identifier.doi 10.1063/1.3688245
dc.description.abstract Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less significant in junctionless pMuGFETs than AM pMuGFETs. The threshold voltage shift is less significant in junctionless transistors than AM transistors. The device simulation shows that the peak of lateral electric field and the impact ionization rate of AM device are larger than those of junctionless devices. (C) 2012 American Institute of Physics. (doi:10.1063/1.3688245) en
dc.description.sponsorship University of Incheon (International Cooperative Research Grant in 2011 (No. 2011-0127)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3688245
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Park, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3688245 en
dc.subject MOSFETs en
dc.subject Hot carriers en
dc.subject Transistors en
dc.subject Silicon en
dc.subject Electric fields en
dc.title Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Jean Pierre Colinge, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: jean-pierre.colinge@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000300711200063
dc.contributor.funder Incheon National University
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress jean-pierre.colinge@tyndall.ie en
dc.identifier.articleid 83504


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement