Built-in field reduction in InGaN/GaN quantum dot molecules
No Thumbnail Available
Files
Published Version
Date
2011
Authors
Schulz, Stefan
O'Reilly, Eoin P.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
We use a tight-binding model to study the electronic structure of InGaN/GaN quantum dot molecules grown along the c-axis. This analysis is carried out as a function of the barrier thickness between the two non-identical dots. Our results show that the built-in field is effectively reduced in systems of coupled nitride quantum dots, leading to an increased spatial overlap of electron and hole wave functions compared to an isolated dot. This finding is in agreement with experimental data reported in the literature and is directly related to the behavior of the built-in potential outside an isolated dot. (C) 2011 American Institute of Physics. (doi:10.1063/1.3665069)
Description
Keywords
Optical-properties , Semiconductors , Diodes , Gallium compounds , III-V semiconductors , Indium compounds , Semiconductor quantum dots , Tight-binding calculations , Wide band gap semiconductors , Quantum dots , Quantum wells , Electronic structure , Wave functions
Citation
Schulz, S. and O’Reilly, E. P. (2011) 'Built-in field reduction in InGaN/GaN quantum dot molecules', Applied Physics Letters, 99(22), pp. 223106. doi: 10.1063/1.3665069
Copyright
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S. and O’Reilly, E. P. (2011) 'Built-in field reduction in InGaN/GaN quantum dot molecules', Applied Physics Letters, 99(22), pp. 223106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3665069