The curious case of thin-body Ge crystallization

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dc.contributor.author Duffy, Ray
dc.contributor.author Shayesteh, M.
dc.contributor.author McCarthy, Brendan
dc.contributor.author Blake, Alan
dc.contributor.author White, Mary
dc.contributor.author Scully, J.
dc.contributor.author Yu, R.
dc.contributor.author Kelleher, Anne-Marie
dc.contributor.author Schmidt, Michael
dc.contributor.author Petkov, Nikolay
dc.contributor.author Pelaz, L.
dc.contributor.author Marques, L. A.
dc.date.accessioned 2017-07-28T10:48:31Z
dc.date.available 2017-07-28T10:48:31Z
dc.date.issued 2011
dc.identifier.citation Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L. and Marqués, L. A. (2011) 'The curious case of thin-body Ge crystallization', Applied Physics Letters, 99(13), pp. 131910. en
dc.identifier.volume 99
dc.identifier.issued 13
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4314
dc.identifier.doi 10.1063/1.3643160
dc.description.abstract The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the < 110 > direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably (111) stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 degrees C rapid-thermal-anneal, Ge structures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3643160) en
dc.description.sponsorship Science Foundation Ireland (09/SIRG/I1623, 09/SIRG/I1621) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3643160
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L. and Marqués, L. A. (2011) 'The curious case of thin-body Ge crystallization', Applied Physics Letters, 99(13), pp. 131910 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3643160 en
dc.subject Ion-implantation en
dc.subject Germanium en
dc.subject Layers en
dc.subject Crystals en
dc.subject Silicon en
dc.subject Field en
dc.subject Annealing en
dc.subject Crystallisation en
dc.subject Crystallites en
dc.subject Elemental semiconductors en
dc.subject Stacking faults en
dc.subject Transmission electron microscopy en
dc.subject Twin boundaries en
dc.subject Crystal defects en
dc.title The curious case of thin-body Ge crystallization en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ray Duffy, Tyndall National Institute, University College Cork, Cork, Ireland + 353 21 234 6644, Email: ray.duffy@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000295618000030
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress ray.duffy@tyndall.ie en
dc.identifier.articleid 131910


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