Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements
Nazarov, Alexei N.; Ferain, Isabelle; Akhavan, Nima Dehdashti; Razavi, Pedram; Yu, Ran; Colinge, Jean-Pierre
Date:
2011
Copyright:
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements', Applied Physics Letters, 99(7), pp. 073502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3626038
Citation:
Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements', Applied Physics Letters, 99(7), pp. 073502. doi: 10.1063/1.3626038
Abstract:
A technique based on the combined measurements of random telegraph-signal noise amplitude and drain current vs. gate voltage characteristics is proposed to extract the channel mobility in inversion-mode and accumulation-mode nanowire transistors. This method does not require the preliminary knowledge of the gate oxide capacitance or that of the channel width. The method accounts for the presence of parasitic source and drain resistance effect. It has been used to extract the zero-field mobility and the field mobility reduction factor in inversion-mode and junctionless transistors operating in accumulation mode. (C) 2011 American Institute of Physics. (doi:10.1063/1.3626038)
Show full item record
