In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

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Date
2011
Authors
Milojevic, M.
Contreras-Guerrero, Rocio
O'Connor, Éamon
Brennan, B.
Hurley, Paul K.
Kim, J.
Hinkle, C. L.
Wallace, Robert M.
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AIP Publishing
Published Version
10.1063/1.3615666
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Abstract
Ga2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 degrees C and substrate temperature of 425 degrees C. The growth on In0.53Ga0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the "clean-up" effect following TMA exposures causing As-As bonding formation resulting in a high interface state density. (C) 2011 American Institute of Physics. (doi:10.1063/1.3615666)
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Keywords
Molecular-beam epitaxy , Gaas , Interfaces , Gaas(001)-c(2x8)/(2x4) , Semiconductor , Substrate , Oxidation , Impact , States , Atomic layer deposition , OzoneIII-V semiconductors , Bond formation , Passivation
Citation
Milojevic, M., Contreras-Guerrero, R., O’Connor, E., Brennan, B., Hurley, P. K., Kim, J., Hinkle, C. L. and Wallace, R. M. (2011) 'In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition', Applied Physics Letters, 99(4), pp. 042904. doi: 10.1063/1.3615666
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http://aip.scitation.org/doi/abs/10.1063/1.3615666
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https://hdl.handle.net/10468/4316
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Tyndall National Institute - Journal Articles
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© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Milojevic, M., Contreras-Guerrero, R., O’Connor, E., Brennan, B., Hurley, P. K., Kim, J., Hinkle, C. L. and Wallace, R. M. (2011) 'In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition', Applied Physics Letters, 99(4), pp. 042904 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3615666