Two-dimensional carrier density distribution inside a high power tapered laser diode
Pagano, Roberto; Ziegler, Mathias; Tomm, Jens W.; Esquivias, I.; Tijero, J. M. G.; O'Callaghan, James R.; Michel, N.; Krakowski, M.; Corbett, Brian M.
Date:
2011
Copyright:
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pagano, R., Ziegler, M., Tomm, J. W., Esquivias, I., Tijero, J. M. G., O’Callaghan, J. R., Michel, N., Krakowski, M. and Corbett, B. (2011) 'Two-dimensional carrier density distribution inside a high power tapered laser diode', Applied Physics Letters, 98(22), pp. 221110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3596445
Citation:
Pagano, R., Ziegler, M., Tomm, J. W., Esquivias, I., Tijero, J. M. G., O’Callaghan, J. R., Michel, N., Krakowski, M. and Corbett, B. (2011) 'Two-dimensional carrier density distribution inside a high power tapered laser diode', Applied Physics Letters, 98(22), pp. 221110. doi: 10.1063/1.3596445
Abstract:
The spontaneous emission of a GaAs-based tapered laser diode emitting at lambda = 1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3596445)
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