Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding
Charash, Ragh; Kim-Chauveau, H.; Lamy, Jean Michel.; Akther, Mahbub; Maaskant, Pleun P.; Frayssinet, E.; de Mierry, P.; Draeger, A. D.; Duboz, J-Y.; Hangleiter, A.; Corbett, Brian M.
Date:
2011
Copyright:
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Charash, R., Kim-Chauveau, H., Lamy, J.-M., Akther, M., Maaskant, P. P., Frayssinet, E., Mierry, P. d., Dräger, A. D., Duboz, J.-Y., Hangleiter, A. and Corbett, B. (2011) 'Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding', Applied Physics Letters, 98(20), pp. 201112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3589974
Citation:
Charash, R., Kim-Chauveau, H., Lamy, J.-M., Akther, M., Maaskant, P. P., Frayssinet, E., Mierry, P. d., Dräger, A. D., Duboz, J.-Y., Hangleiter, A. and Corbett, B. (2011) 'Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding', Applied Physics Letters, 98(20), pp. 201112. doi: 10.1063/1.3589974
Abstract:
Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82In0.18N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to V-n, where n similar to 3 at current densities appropriate to laser operation. (C) 2011 American Institute of Physics. (doi:10.1063/1.3589974)
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