Low-frequency noise in junctionless multigate transistors
Jang, Doyoung; Lee, Jae Woo; Lee, Chi-Woo; Colinge, Jean-Pierre; Montes, Laurent; Lee, Jung Il; Kim, Gyu Tae; Ghibaudo, Gerard
Date:
2011
Copyright:
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jang, D., Lee, J. W., Lee, C.-W., Colinge, J.-P., Montès, L., Lee, J. I., Kim, G. T. and Ghibaudo, G. (2011) 'Low-frequency noise in junctionless multigate transistors', Applied Physics Letters, 98(13), pp. 133502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3569724
Citation:
Jang, D., Lee, J. W., Lee, C.-W., Colinge, J.-P., Montès, L., Lee, J. I., Kim, G. T. and Ghibaudo, G. (2011) 'Low-frequency noise in junctionless multigate transistors', Applied Physics Letters, 98(13), pp. 133502. doi: 10.1063/1.3569724
Abstract:
Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30 x 10(16) cm(-3) eV(-1), which is similar to Si-SiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers. (C) 2011 American Institute of Physics. (doi:10.1063/1.3569724)
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