Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

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2010
Authors
Dimastrodonato, Valeria
Mereni, Lorenzo O.
Juska, Gediminas
Pelucchi, Emanuele
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AIP Publishing
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Abstract
We report on some surprising optical properties of diluted nitride InGaAs(1-epsilon)N(epsilon)/GaAs (epsilon << 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots. (C) 2010 American Institute of Physics. (doi:10.1063/1.3481675)
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Inverted pyramids , Light-emission , Mu-m , Gainnas , Gaas , Nanostructures , Alloys , Energy , Biexcitons , Fine structure , Gallium arsenide , Gallium compounds , III-V semiconductors , Indium compounds , MOCVD , Photoluminescence , Semiconductor doping , Semiconductor growth , Semiconductor quantum dots , Vapour phase epitaxial growth , Excitons , Metalorganic vapor phase epitaxy , Emission spectra , Quantum dots
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Dimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115. doi: 10.1063/1.3481675
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© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3481675