Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

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dc.contributor.author Dimastrodonato, Valeria
dc.contributor.author Mereni, Lorenzo O.
dc.contributor.author Juska, Gediminas
dc.contributor.author Pelucchi, Emanuele
dc.date.accessioned 2017-07-28T11:04:42Z
dc.date.available 2017-07-28T11:04:42Z
dc.date.issued 2010
dc.identifier.citation Dimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115. doi: 10.1063/1.3481675 en
dc.identifier.volume 97
dc.identifier.issued 7
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4335
dc.identifier.doi 10.1063/1.3481675
dc.description.abstract We report on some surprising optical properties of diluted nitride InGaAs(1-epsilon)N(epsilon)/GaAs (epsilon << 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots. (C) 2010 American Institute of Physics. (doi:10.1063/1.3481675) en
dc.description.sponsorship Higher Education Authority (Program for Research in Third Level Institutions 2007–2011 via the INSPIRE program); Science Foundation Ireland ( Grant Nos. 05/IN.1/I25 and 08/RFP/MTR1659) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3481675
dc.rights © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3481675 en
dc.subject Inverted pyramids en
dc.subject Light-emission en
dc.subject Mu-m en
dc.subject Gainnas en
dc.subject Gaas en
dc.subject Nanostructures en
dc.subject Alloys en
dc.subject Energy en
dc.subject Biexcitons en
dc.subject Fine structure en
dc.subject Gallium arsenide en
dc.subject Gallium compounds en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject MOCVD en
dc.subject Photoluminescence en
dc.subject Semiconductor doping en
dc.subject Semiconductor growth en
dc.subject Semiconductor quantum dots en
dc.subject Vapour phase epitaxial growth en
dc.subject Excitons en
dc.subject Metalorganic vapor phase epitaxy en
dc.subject Emission spectra en
dc.subject Quantum dots en
dc.title Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Valeria Dimas, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: emanuele.pelucchi@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000281153600046
dc.contributor.funder Higher Education Authority
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress emanuele.pelucchi@tyndall.ie en
dc.identifier.articleid 72115


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