Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
Shin, Byungha; Weber, Justin R.; Long, Rathnait D.; Hurley, Paul K.; Van de Walle, Chris G.; McIntyre, Paul C.
Date:
2010
Copyright:
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3430061
Citation:
Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908. doi: 10.1063/1.3399776
Abstract:
We report experimental and theoretical studies of defects producing fixed charge within Al(2)O(3) layers grown by atomic layer deposition (ALD) on In(0.53)Ga(0.47)As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al(2)O(3)/n-In(0.53)Ga(0.47)As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al(2)O(3). We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al(2)O(3). (C) 2010 American Institute of Physics. (doi:10.1063/1.3399776)
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