Low subthreshold slope in junctionless multigate transistors

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Date
2010
Authors
Lee, Chi-Woo
Nazarov, Alexei N.
Ferain, Isabelle
Akhavan, Nima Dehdashti
Yan, Ran
Razavi, Pedram
Yu, Ran
Doria, Rodrigo T.
Colinge, Jean-Pierre
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Volume Title
Publisher
AIP Publishing
Published Version
10.1063/1.3358131
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Abstract
The improvement of subthreshold slope due to impact ionization is compared between "standard" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3358131)
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Keywords
Impact ionization , Silicon , Ionization , MOSFETs , Doping , Silicon , Band gap
Citation
Lee, C.-W., Nazarov, A. N., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Doria, R. T. and Colinge, J.-P. (2010) 'Low subthreshold slope in junctionless multigate transistors', Applied Physics Letters, 96(10), pp. 102106. doi: 10.1063/1.3358131
Link to publisher’s version
http://aip.scitation.org/doi/abs/10.1063/1.3358131
URI
https://hdl.handle.net/10468/4345
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Tyndall National Institute - Journal Articles
Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lee, C.-W., Nazarov, A. N., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Doria, R. T. and Colinge, J.-P. (2010) 'Low subthreshold slope in junctionless multigate transistors', Applied Physics Letters, 96(10), pp. 102106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3358131