Electron energy band alignment at the (100)Si/MgO interface

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Electron energy band alignment at the (100)Si/MgO interface

Afanas'ev, V. V.; Stesmans, A.; Cherkaoui, Karim; Hurley, Paul K.
Date: 2010
Copyright: © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3294328
Related: http://aip.scitation.org/doi/abs/10.1063/1.3294328
Citation: Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103. doi: 10.1063/1.3294328
Published Version: 10.1063/1.3294328

Abstract:

The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37 +/- 0.05 eV above the top of the silicon valence band.(C) 2010 American Institute of Physics. (doi:10.1063/1.3294328)

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