Citation:Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103. doi: 10.1063/1.3294328
The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37 +/- 0.05 eV above the top of the silicon valence band.(C) 2010 American Institute of Physics. (doi:10.1063/1.3294328)
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