Electron energy band alignment at the (100)Si/MgO interface

Simple item page
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorStesmans, A.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHurley, Paul K.
dc.contributor.funderFonds Wetenschappelijk Onderzoek
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:22:09Z
dc.date.available2017-07-28T11:22:09Z
dc.date.issued2010
dc.description.abstractThe electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37 +/- 0.05 eV above the top of the silicon valence band.(C) 2010 American Institute of Physics. (doi:10.1063/1.3294328)en
dc.description.sponsorshipFonds Wetenschappelijk Onderzoek ((FWO)-Vlaanderen Grant No.1.5.057.07); Science Foundation Ireland (FORME Strategic Research Cluster Award No. 07/SRC/I1172)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid52103
dc.identifier.citationAfanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103. doi: 10.1063/1.3294328en
dc.identifier.doi10.1063/1.3294328
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued5
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4347
dc.identifier.volume96
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3294328
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3294328en
dc.subjectInternal photoemissionen
dc.subjectFilmsen
dc.subjectMgoen
dc.subjectStabilityen
dc.subjectOxidesen
dc.subjectAmorphous stateen
dc.subjectAnnealingen
dc.subjectConduction bandsen
dc.subjectCrystallisationen
dc.subjectElemental semiconductorsen
dc.subjectEnergy gapen
dc.subjectInterface statesen
dc.subjectMagnesium compoundsen
dc.subjectPhotoemissionen
dc.subjectSiliconen
dc.subjectValence bandsen
dc.subjectGolden
dc.subjectPhotoelectric conversionen
dc.subjectBand gapen
dc.subjectElectrodesen
dc.subject~Tyndall National Institute - Journal Articles~en
dc.titleElectron energy band alignment at the (100)Si/MgO interfaceen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3322.pdf
Size:
393.53 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles