Electron energy band alignment at the (100)Si/MgO interface

Afanas'ev, V. V.; Stesmans, A.; Cherkaoui, Karim; Hurley, Paul K.

Electron energy band alignment at the (100)Si/MgO interface

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Published Version

Date

2010

Authors

Afanas'ev, V. V.

Stesmans, A.

Cherkaoui, Karim

Hurley, Paul K.

Publisher

AIP Publishing

Published Version

10.1063/1.3294328

Abstract

The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37 +/- 0.05 eV above the top of the silicon valence band.(C) 2010 American Institute of Physics. (doi:10.1063/1.3294328)

Keywords

Internal photoemission , Films , Mgo , Stability , Oxides , Amorphous state , Annealing , Conduction bands , Crystallisation , Elemental semiconductors , Energy gap , Interface states , Magnesium compounds , Photoemission , Silicon , Valence bands , Gold , Photoelectric conversion , Band gap , Electrodes

Citation

Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103. doi: 10.1063/1.3294328

Copyright

© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3294328

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