Comment on "Comparison of air breakdown and substrate injection as mechanisms to induce dielectric charging in microelectromechanical switches" [Appl. Phys. Lett. 92, 043502 (2008)]

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dc.contributor.author Olszewski, Oskar Z.
dc.contributor.author O'Mahony, Conor
dc.contributor.author Houlihan, Ruth
dc.contributor.author Duane, Russell
dc.date.accessioned 2017-07-28T11:22:10Z
dc.date.available 2017-07-28T11:22:10Z
dc.date.issued 2009
dc.identifier.citation Olszewski, Z., O’Mahony, C., Houlihan, R. and Duane, R. (2009) 'Comment on “Comparison of air breakdown and substrate injection as mechanisms to induce dielectric charging in microelectromechanical switches” [Appl. Phys. Lett. 92, 043502 (2008)]', Applied Physics Letters, 95(17), pp. 176101. en
dc.identifier.volume 95
dc.identifier.issued 17
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4351
dc.identifier.doi 10.1063/1.3255008
dc.description.abstract The purpose of this comment is to provide additional insight into the reliability of microelectromechanical capacitive switches (MEMSs) investigated by Molinero and Casta er [Appl. Phys. Lett. 92, 043502 (2008)]. We show that the presence or absence of ambient humidity determines whether the shift in the capacitance-voltage (C-V) curve of oxide-based MEMS occurs as a result of voltage stress. In humid air, negative and positive shifts in the C-V curve are observed after negative and positive bias stress. In dry air no such shifts in the C-V curve are seen. These shifts are similar to those reported on oxide-based switches by Molinero and Castaner [Appl. Phys. Lett. 92, 043502 (2008)] where they show shifts occurring in room ambient pressure, but not in vacuum. This indicates that not only air pressure but also air humidity can be responsible for shifts in MEMS. (C) 2009 American Institute of Physics. (doi: 10.1063/1.3255008) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3255008
dc.rights © 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Olszewski, Z., O’Mahony, C., Houlihan, R. and Duane, R. (2009) 'Comment on “Comparison of air breakdown and substrate injection as mechanisms to induce dielectric charging in microelectromechanical switches” [Appl. Phys. Lett. 92, 043502 (2008)]', Applied Physics Letters, 95(17), pp. 176101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3255008 en
dc.subject Water en
dc.subject Microelectromechanical systems en
dc.subject Dielectrics en
dc.subject Oxide surfaces en
dc.subject Charge injection en
dc.subject Electric measurements en
dc.title Comment on "Comparison of air breakdown and substrate injection as mechanisms to induce dielectric charging in microelectromechanical switches" [Appl. Phys. Lett. 92, 043502 (2008)] en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Zbigniew Olszewski, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 234 6980, Email: zbigniew.olszewski@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000271360400096
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress zbigniew.olszewski@tyndall.ie en
dc.identifier.articleid 176101


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