Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes
Charash, Ragh; Maaskant, Pleun P.; Lewis, Liam; McAleese, C.; Kappers, M. J.; Humphreys, C. J.; Corbett, Brian M.
Date:
2009
Copyright:
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Charash, R., Maaskant, P. P., Lewis, L., McAleese, C., Kappers, M. J., Humphreys, C. J. and Corbett, B. (2009) 'Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes', Applied Physics Letters, 95(15), pp. 151103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3244203
Citation:
Charash, R., Maaskant, P. P., Lewis, L., McAleese, C., Kappers, M. J., Humphreys, C. J. and Corbett, B. (2009) 'Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes', Applied Physics Letters, 95(15), pp. 151103. doi: 10.1063/1.3244203
Abstract:
Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well. (C) 2009 American Institute of Physics. (doi:10.1063/1.3244203)
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