Citation:Lorke, M., Seebeck, J., Gartner, P., Jahnke, F. and Schulz, S. (2009) 'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots', Applied Physics Letters, 95(8), pp. 081108. doi: 10.1063/1.3213543
A microscopic theory for the optical absorption and gain spectra of InN quantum-dot systems is used to study the combined influence of material properties and interaction-induced effects. Atomistic tight-binding calculations for the single-particle properties of the self-assembled quantum-dot and wetting-layer system are used in conjunction with a many-body description of Coulomb interaction and carrier phonon interaction. We analyze the carrier-density and temperature dependence of strong excitation-induced energy shifts of the dipole-allowed quantum-dot transitions.(C) 2009 American Institute of Physics. (10.1063/1.3213543)
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